Author here. The supply angle is exactly the motivation — HBM is the hardest part to get and ~26% of an AI rack's BOM.

First, separate three things people lump together. Apple already does memory on package (M-series unified memory = LPDDR5X dies next to the SoC). The near-term industry path is bonded stacking (AMD 3D V-cache, HBM4's logic base die). What we're doing is monolithic — growing the memory on top of finished logic. Three reasons that distinction matters:

1. Bonding only helps at the margin. A hybrid-bond interface still carries a relatively large interconnect capacitance in um scale, so at memory bandwidth the I/O drivers crossing it dissipate most of the power and overheat — you move the memory closer without escaping the I/O energy. Monolithic inter-tier vias are nano-scale (we model ~1% the interconnect energy of a bonded interface), and that's the only thing that actually moves the needle.

2. 2D-TMDs are the only functional CMOS you can build in the BEOL. Monolithic 3D means fabricating the upper tiers after the logic, at ≤450 °C, or you cook everything underneath. Silicon needs ~1000 °C; low-temp oxide semiconductors (IGZO) are n-type only, so no real CMOS. 2D-TMDs give both n- and p-type at BEOL temperature. Nothing else does.

3. ~6 orders of magnitude lower off-current (~1 fA/µm) finally makes a capacitor-free cell work. Conventional 1T1C DRAM needs a big storage capacitor — the deep-trench / high-aspect-ratio etch you can't do in the BEOL anyway. A 2T0C gain cell holds charge on a transistor gate with no capacitor; in silicon it leaked away in microseconds, so it was never usable. With 2D-TMD leakage you get ~1.8 s retention — refresh at ~1 Hz and drop the capacitor, and the trench, entirely.

> TMDs

= Transition Metal Dichalcogenides

> BEOL

= Back End Of Line. The later stages of semiconductor manufacturing (after the standard CMOS logic transistors) e.g. adding the metal wiring and interconnect layers. Think end of a manufacturing line.

The core concept is to layer multiple non-standard non-silicon memory transistors above the metal layers.

That sounds like a stunning invention, since I think that alone implies better memory density than current SRAM (ignoring the extra complexity of stacking it above a logic layer).