> HZO is a ferroelectric. That is, it has a crystal structure that allows it to maintain an internal electrical field even when no external voltage is applied. (Conventional dielectrics don’t have this inherent electrical field.) When a voltage is applied to the transistor, HZO’s inherent electric field opposes it. In a transistor, this leads to a counterintuitive effect: A decrease in voltage causes an increase in the charge stored in HZO. This negative capacitance response effectively amplifies the gate control, helping the transistor’s 2D electron cloud accumulate charge and boosting the on-state current.

> Leakage current is a well-known problem in these kinds of transistors, “so integrating an innovative ferroelectric layer into the gate stack to address this has clear promise,” says Aaron Franklin, an electrical engineer at Duke University, in Durham, N.C. “It certainly is an exciting and creative advancement.”

I'm wondering if this will eventually transition out of power electronics into other sorts of electronics. Sounds like they've got their next five years planned just looking at power electronics though.