> Leakage current is a well-known problem in these kinds of transistors, “so integrating an innovative ferroelectric layer into the gate stack to address this has clear promise,” says Aaron Franklin, an electrical engineer at Duke University, in Durham, N.C. “It certainly is an exciting and creative advancement.”

I'm wondering if this will eventually transition out of power electronics into other sorts of electronics. Sounds like they've got their next five years planned just looking at power electronics though.