| ▲ | nine_k 5 hours ago |
| The article says nothing about the construction or special qualities of ZAM, as compared to HBM :( |
|
| ▲ | ThrowawayR2 5 hours ago | parent | next [-] |
| There doesn't seem to be much detail anywhere else either. All I was able to gather was that the memory dies are stacked (not new) but that the vias connecting the stack are angled instead of straight up and down and this is better because ... reasons? |
|
| ▲ | jacknews 5 hours ago | parent | prev [-] |
| Indeed, what is it? The article doesn't say, only espouses the supposed benefits. |
| |
| ▲ | p_ing 5 hours ago | parent [-] | | Looks like an evolution of HBM. https://wccftech.com/intel-showcases-its-zam-memory-prototyp... | | |
| ▲ | nine_k 4 hours ago | parent [-] | | «[T]he primary standout feature of this memory solution is the integration of a staggered interconnect topology that routes connections diagonally within the die stack rather than drilling straight down. According to Intel, the biggest benefit lies in ZAM's thermal capabilities.» The connectors on the side indeed look like the letter Z. Maybe it disperses the stronger currents across the stack of the crystals, instead of concentrating. | | |
| ▲ | cogman10 4 hours ago | parent [-] | | I'd guess that it'd allow for thinner layers which is ultimately why you can pack in more memory. And why it's not currently done is likely because it's hard enough to stack when everything is uniform. A small deformity in the first layer will spoil the entire chip. |
|
|
|
