| ▲ | ErroneousBosh 2 days ago | |
> BC told you that this is a silicon small-power audio-frequency transistor. BC breaks down as a silicon device, with no heater voltage, and a "triode". If it was germanium, it would be AC <something>. So BC548 is a silicon "triode", AC128 is a germanium "triode", and PC97 is a triode with a 300mA-rated heater (P is series connected with other valves, 300mA) in a B7G base (the 9). "BF" might be an RF transistor although "F" was really used to mean a pentode in valves. And those dual NPNs used in expo converters in synths might be accurately enough labeled as BCC548, similar to the ubiquitous ECC83 dual triode. You also see this with diodes, were AA119 is a germanium small-signal diode, and BY127 is a silicon high(-ish) power rectifier diode, for example. | ||
| ▲ | adrian_b an hour ago | parent | next [-] | |
No. "B" is just the material (for instance "A" = Ge, "B" = Si, "C" = GaAs and related materials). The letter that encodes the semiconductor material replaced the letter that encoded the voltage or the current used by the heating filament of vacuum tubes. The material letter has nothing to do with the kind of device. Examples of silicon diodes: BA (small power rectifier), BB (varicap), BY (high power rectifier), BZ (Zener diode). It is true that some of the letters that denote kinds of devices have been inherited from the previous nomenclature of European vacuum tubes. So C, D, F, L, used for low-power/high-power AF/RF bipolar transistors come from the letters used for low-power/high-power triodes/pentodes. However other letters, like S, U, R, T, used for switching transistors and thyristors (a.k.a. SCRs), were new for the semiconductor device nomenclature. | ||
| ▲ | formerly_proven 7 hours ago | parent | prev [-] | |
Just no. | ||