Step recovery diode!

Abuse minority carrier lifetime to very suddenly turn from resistive to capacitive just after switching from forward current to reverse bias; use the fact that the current wants to keep flowing to force it to concentrate into another step recovery diode that's about to cut out, in turn making the cut off spike even sharper, and on.

Surprisingly capable for e.g. blasting a FET gate off while tanking the Miller effect gate current needs through sheer power of SRD-based-pulse-shaping. Because for e.g. GaN and SiC if you have to choose between ZVS and ZCS, you can take ZVS and just furnish a gate pulse that _makes_ the channel remain off as the current drops and the voltage soars. At least if you pull some tricks and make the current commutation loop sufficiently low inductance to keep your transistors from blowing out in self-inflicted overvoltage due to a current that needed to pass too high an inductance in too short a time. (Total drain charge is sadly fundamental to the channel's existence, and non-ZVS turn-on is unavoidably lossy. A majority carrier device is theoretically capable of just switching off though if you can arrange the structure for extremely low inductance.)