It should be noted that the claim that the new DRAM cell has no capacitor can be misleading.

Like any DRAM cell, it has a capacitor, which in this case is the gate capacitor of a MOS transistor.

The separate capacitor of current DRAM cells is replaced by a second transistor, whose gate capacitor stores the charge that distinguishes stored "1"s from stored "0"s. Such 2-transistor cells, where the second transistor used for sensing the cell state also includes the capacitor, are not new, they had been used in many early DRAM devices, decades ago.

The main advantage of the new cell is in replacing silicon for the transistors of the DRAM cell with another semiconductor material with wider bandgap than silicon.

This reduces a lot the leakage currents, allowing a smaller capacitor. The gate capacitor of the storage transistor is sufficient, so no other separate capacitor is needed.

One thing that is not mentioned is how resistant are the new DRAM cells to radiation. The smaller stored charge makes them more susceptible, but the wider bandgap of the transistors makes them less susceptible, so it is uncertain which is the actual behavior.