The Samsung 850 EVO drives probably used an SLC write cache. A small portion of the NAND is configured to use as an SLC write buffer so they can handle a burst of writes faster and later move them the the MLC/TLC region. This is sufficient for typical consumer workloads.

Another thing you will notice is the 850 EVO is 500GB capacity while the Intel one is 480GB. The difference is capacity is put towards overprovisioning which reduces write amplification. The idea is if you have sufficient free space available, whole NAND blocks will naturally get invalidated before you run out of free blocks.