▲ | mmmBacon 2 days ago | |||||||
While interesting this approach is not any faster than the Ge based photodiodes that we have currently. State of the art is ~-110GHz in Germanium Si photonics using standard fabs. This is only 50GHz. | ||||||||
▲ | glumreaper 2 days ago | parent | next [-] | |||||||
The 50GHz or 20ps figure is actually the limit of the gear the scientists had available - from the paper at https://iopscience.iop.org/article/10.1088/1361-6463/ad9284/... "the signal state transitions were established at less than 20 ps, which is comparable to the bandwidth limit of the oscilloscope utilized at 50 GHz. [...] the initial rise time constant may be shorter than the measurement limits of the oscilloscope." | ||||||||
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▲ | momoschili 2 days ago | parent | prev | next [-] | |||||||
A key here for western users is that it does not include Ge, which is notably a material that China has a stranglehold on. | ||||||||
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▲ | glumreaper 2 days ago | parent | prev | next [-] | |||||||
I got the impression that "faster" refers to potential bandwidth, as the device responds to shorter wavelengths (300nm to 1.6nm) than other photodetectors. Shorter wavelengths means higher frequencies, "number go up" = more data per second. This is press release language though, it could mean anything. | ||||||||
▲ | frainfreeze 2 days ago | parent | prev [-] | |||||||
Isn't state of the art already in the 300Ghz range? | ||||||||
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